@Article{JAMS-2-2,
author = {Wang, Sheng and Yun, Kang and Yu, Han},
title = {Transverse Stark Effect of Electrons in GaAs Semiconducting Quantum Boxes},
journal = {Journal of Atomic and Molecular Sciences},
year = {2011},
volume = {2},
number = {2},
pages = {162--169},
abstract = {<p style="text-align: justify;">The transverse Stark shift of the electronic energy levels in GaAs semiconducting quantum box is investigated by the use of variational solutions to the effective-mass approximation. It is found an interesting phenomenon that the largest Stark shift is obtained for the electric field directed along the diagonal in cross section of a quantum box, while for a rectangular one, the shift reaches peak value for the low field directed along a side of cross section and for the high field along the diagonal. Likewise, the conclusion is shown that the transverse Stark shift in a quantum box depends highly on the ratio of cross sectional sides while is irrelevant to its height. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination and wide irradiance spectrum.</p>},
issn = {2079-7346},
doi = {https://doi.org/10.4208/jams.082510.092010a},
url = {https://global-sci.com/article/74410/transverse-stark-effect-of-electrons-in-gaas-semiconducting-quantum-boxes}
}