@Article{CiCP-19-2,
author = {},
title = {Dynamics of the Formation of the Nitrogen-Vacancy Center in Diamond},
journal = {Communications in Computational Physics},
year = {2016},
volume = {19},
number = {2},
pages = {380--392},
abstract = {<p style="text-align: justify;">We present results of simulations of the energetics and dynamics involved
in the realization of the NV (nitrogen-vacancy) center in diamond. We use the self-consistent
charge-density functional tight-binding approximation and show that when
the nitrogen resides on a single substitutional site, it fails to attract a vacancy, hence no
NV center can be formed. However, if it occupies a split interstitial site and two vacancies
reside on the second or third neighbor sites, an NV center will form following
annealing at temperatures as low as $300℃$ and $650℃$, respectively. These results provide
guidelines to experimentalists on how to increase the efficiency of NV formation
in diamond.</p>},
issn = {1991-7120},
doi = {https://doi.org/10.4208/cicp.261014.200515a},
url = {https://global-sci.com/article/80258/dynamics-of-the-formation-of-the-nitrogen-vacancy-center-in-diamond}
}