@Article{CiCP-4-5,
author = {},
title = {Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode},
journal = {Communications in Computational Physics},
year = {2008},
volume = {4},
number = {5},
pages = {1034--1050},
abstract = {<p style="text-align: justify;">We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type
models. Careful numerical investigations to a quantum hydrodynamic model reveal
that the transient simulations do not always converge to the steady states. In particular,
growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and
stationary computations are also performed for a unipolar quantum drift-diffusion
model.</p>},
issn = {1991-7120},
doi = {https://doi.org/2008-CiCP-7826},
url = {https://global-sci.com/article/81291/stationary-and-transient-simulations-for-a-one-dimensional-resonant-tunneling-diode}
}