@Article{NMTMA-8-3,
author = {},
title = {An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method},
journal = {Numerical Mathematics: Theory, Methods and Applications},
year = {2015},
volume = {8},
number = {3},
pages = {356--382},
abstract = {<p style="text-align: justify;">The mathematical model for semiconductor devices in three space dimensions are numerically discretized. The system consists of three quasi-linear partial differential equations about three physical variables: the electrostatic potential, the electron concentration and the hole concentration. We use standard mixed finite element method to approximate the elliptic electrostatic potential equation. For the two convection-dominated concentration equations, a characteristics-mixed finite element method is presented. The scheme is locally conservative. The optimal $L^2$-norm error estimates are derived by the aid of a post-processing step. Finally, numerical experiments are presented to validate the theoretical analysis.</p>},
issn = {2079-7338},
doi = {https://doi.org/10.4208/nmtma.2015.my12031},
url = {https://global-sci.com/article/90578/an-approximation-of-three-dimensional-semiconductor-devices-by-mixed-finite-element-method-and-characteristics-mixed-finite-element-method}
}