Multistep Finite Volume Approximations to the Transient Behavior of a Semiconductor Device on General 2D or 3D Meshes. Journal of Computational Mathematics, [S. l.], v. 25, n. 4, p. 485–496, 2007. Disponível em: https://global-sci.com/index.php/JCM/article/view/11841. Acesso em: 6 dec. 2025.