Mixed Layer Problem of a Three-Dimensional Drift-Diffusion Model for Semiconductors

Chundi Liu; Shu Wang; Wenqing Xu

doi:10.4208/jpde.v30.n3.6

Mixed Layer Problem of a Three-Dimensional Drift-Diffusion Model for Semiconductors

Authors

Chundi Liu College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
Shu Wang College of Applied Science, Beijing University of Technology, Beijing 100124, China
Wenqing Xu College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

DOI:

https://doi.org/10.4208/jpde.v30.n3.6

Keywords:

Drift-diffusion model;quasineutral limit;mixed layer

Abstract

" The quasineutral limit and the mixed layer problem of a three-dimensional drift-diffusion model is discussed in this paper. For the Neumann boundaries and the general initial data, the quasineutral limit is proven rigorously with the help of the weighted energy method, the matched asymptotic expansion method of singular perturbation problem and the entropy production inequality."

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Published

2017-08-02

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Issue

Vol. 30 No. 3 (2017)

Section

Articles

How to Cite

Mixed Layer Problem of a Three-Dimensional Drift-Diffusion Model for Semiconductors. (2017). Journal of Partial Differential Equations, 30(3), 264-280. https://doi.org/10.4208/jpde.v30.n3.6