TY - JOUR
T1 - Multistep Finite Volume Approximations to the Transient Behavior of a Semiconductor Device on General 2D or 3D Meshes
JO - Journal of Computational Mathematics
VL - 4
SP - 485
EP - 496
PY - 2007
DA - 2007/08
SN - 25
DO - http://doi.org/
UR - https://global-sci.org/intro/article_detail/jcm/8706.html
KW - Semiconductor device, Unstructured meshes, Finite volume, Multistep method, Error estimates.
AB - <p style="text-align: justify;">In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.</p>