Year: 2022
Author: Giovanni Nastasi, V. Dario Camiola, Vittorio Romano
Communications in Computational Physics, Vol. 31 (2022), Iss. 2 : pp. 449–494
Abstract
Graphene nanoribbons are considered as one of the most promising ways to
design electron devices where the active area is made of graphene. In fact, graphene
nanoribbons present a gap between the valence and the conduction bands as in standard semiconductors such as Si or GaAs, at variance with large area graphene which is
gapless, a feature that hampers a good performance of graphene field effect transistors.
To use graphene nanoribbons as a semiconductor, an accurate analysis of their
electron properties is needed. Here, electron transport in graphene nanoribbons is
investigated by solving the semiclassical Boltzmann equation with a discontinuous
Galerkin method. All the electron-phonon scattering mechanisms are included. The
adopted energy band structure is that devised in [1] while according to [2] the edge
effects are described as an additional scattering stemming from the Berry-Mondragon
model which is valid in presence of edge disorder. With this approach a spacial 1D
transport problem has been solved, even if it remains two dimensional in the wave-vector space. A degradation of charge velocities, and consequently of the mobilities, is
found by reducing the nanoribbon width due mainly to the edge scattering.
You do not have full access to this article.
Already a Subscriber? Sign in as an individual or via your institution
Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/10.4208/cicp.OA-2021-0032
Communications in Computational Physics, Vol. 31 (2022), Iss. 2 : pp. 449–494
Published online: 2022-01
AMS Subject Headings: Global Science Press
Copyright: COPYRIGHT: © Global Science Press
Pages: 46
Keywords: Graphene nanoribbons bipolar charge transport discontinuous Galerkin method.