Year: 2022
Author: Giovanni Nastasi, V. Dario Camiola, Vittorio Romano
Communications in Computational Physics, Vol. 31 (2022), Iss. 2 : pp. 449–494
Abstract
Graphene nanoribbons are considered as one of the most promising ways to
design electron devices where the active area is made of graphene. In fact, graphene
nanoribbons present a gap between the valence and the conduction bands as in standard semiconductors such as Si or GaAs, at variance with large area graphene which is
gapless, a feature that hampers a good performance of graphene field effect transistors.
To use graphene nanoribbons as a semiconductor, an accurate analysis of their
electron properties is needed. Here, electron transport in graphene nanoribbons is
investigated by solving the semiclassical Boltzmann equation with a discontinuous
Galerkin method. All the electron-phonon scattering mechanisms are included. The
adopted energy band structure is that devised in [1] while according to [2] the edge
effects are described as an additional scattering stemming from the Berry-Mondragon
model which is valid in presence of edge disorder. With this approach a spacial 1D
transport problem has been solved, even if it remains two dimensional in the wave-vector space. A degradation of charge velocities, and consequently of the mobilities, is
found by reducing the nanoribbon width due mainly to the edge scattering.
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Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/10.4208/cicp.OA-2021-0032
Communications in Computational Physics, Vol. 31 (2022), Iss. 2 : pp. 449–494
Published online: 2022-01
AMS Subject Headings: Global Science Press
Copyright: COPYRIGHT: © Global Science Press
Pages: 46
Keywords: Graphene nanoribbons bipolar charge transport discontinuous Galerkin method.
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