Monte Carlo Simulations of Elastic Scattering with Applications to DC and High Power Pulsed Magnetron Sputtering for <em>Ti</em><sub>3</sub><em>SiC</em><sub>2</sub>

Monte Carlo Simulations of Elastic Scattering with Applications to DC and High Power Pulsed Magnetron Sputtering for <em>Ti</em><sub>3</sub><em>SiC</em><sub>2</sub>

Year:    2012

Communications in Computational Physics, Vol. 11 (2012), Iss. 5 : pp. 1618–1642

Abstract

We simulate the particle transport in a thin film deposition process made by PVD (physical vapor deposition) and present several models for projectile and target collisions in order to compute the mean free path and the differential cross section (angular distribution of scattered projectiles) of the scattering process. A detailed description of collision models is of the highest importance in Monte Carlo simulations of high power impulse magnetron sputtering and DC sputtering. We derive an equation for the mean free path for arbitrary interactions (cross sections) that includes the relative velocity between the particles. We apply our results to two major interaction models: hard sphere interaction & screened Coulomb interaction. Both types of interaction separate DC sputtering from HIPIMS. 

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Journal Article Details

Publisher Name:    Global Science Press

Language:    English

DOI:    https://doi.org/10.4208/cicp.210211.270511a

Communications in Computational Physics, Vol. 11 (2012), Iss. 5 : pp. 1618–1642

Published online:    2012-01

AMS Subject Headings:    Global Science Press

Copyright:    COPYRIGHT: © Global Science Press

Pages:    25

Keywords: