Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode

Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode

Year:    2008

Communications in Computational Physics, Vol. 4 (2008), Iss. 5 : pp. 1034–1050

Abstract

We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models. Careful numerical investigations to a quantum hydrodynamic model reveal that the transient simulations do not always converge to the steady states. In particular, growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model.

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Journal Article Details

Publisher Name:    Global Science Press

Language:    English

DOI:    https://doi.org/2008-CiCP-7826

Communications in Computational Physics, Vol. 4 (2008), Iss. 5 : pp. 1034–1050

Published online:    2008-01

AMS Subject Headings:    Global Science Press

Copyright:    COPYRIGHT: © Global Science Press

Pages:    17

Keywords: