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The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device

The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device

Year:    2012

International Journal of Numerical Analysis and Modeling, Vol. 9 (2012), Iss. 1 : pp. 86–104

Abstract

For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized L2 projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.

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Journal Article Details

Publisher Name:    Global Science Press

Language:    English

DOI:    https://doi.org/2012-IJNAM-613

International Journal of Numerical Analysis and Modeling, Vol. 9 (2012), Iss. 1 : pp. 86–104

Published online:    2012-01

AMS Subject Headings:    Global Science Press

Copyright:    COPYRIGHT: © Global Science Press

Pages:    19

Keywords:    Semiconductor device alternating-direction moving meshes characteristic finite element L2 error estimate.