The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device
Year: 2012
International Journal of Numerical Analysis and Modeling, Vol. 9 (2012), Iss. 1 : pp. 86–104
Abstract
For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized L2 projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.
You do not have full access to this article.
Already a Subscriber? Sign in as an individual or via your institution
Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/2012-IJNAM-613
International Journal of Numerical Analysis and Modeling, Vol. 9 (2012), Iss. 1 : pp. 86–104
Published online: 2012-01
AMS Subject Headings: Global Science Press
Copyright: COPYRIGHT: © Global Science Press
Pages: 19
Keywords: Semiconductor device alternating-direction moving meshes characteristic finite element L2 error estimate.