The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device
Year: 2012
International Journal of Numerical Analysis and Modeling, Vol. 9 (2012), Iss. 1 : pp. 86–104
Abstract
For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized $L^2$ projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in $L^2$ norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.
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Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/2012-IJNAM-613
International Journal of Numerical Analysis and Modeling, Vol. 9 (2012), Iss. 1 : pp. 86–104
Published online: 2012-01
AMS Subject Headings: Global Science Press
Copyright: COPYRIGHT: © Global Science Press
Pages: 19
Keywords: Semiconductor device alternating-direction moving meshes characteristic finite element $L^2$ error estimate.