Multistep Finite Volume Approximations to the Transient Behavior of a Semiconductor Device on General 2D or 3D Meshes
Year: 2007
Journal of Computational Mathematics, Vol. 25 (2007), Iss. 4 : pp. 485–496
Abstract
In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.
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Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/2007-JCM-8706
Journal of Computational Mathematics, Vol. 25 (2007), Iss. 4 : pp. 485–496
Published online: 2007-01
AMS Subject Headings:
Copyright: COPYRIGHT: © Global Science Press
Pages: 12
Keywords: Semiconductor device Unstructured meshes Finite volume Multistep method Error estimates.