Year: 2006
Journal of Computational Mathematics, Vol. 24 (2006), Iss. 3 : pp. 401–411
Abstract
The high frequency CV curves of MOS capacitor have been studied. It is shown that semiclassical model is a good approximation to quantum model and approaches to classical model when the oxide layer is thick. This conclusion provides us an efficient (semiclassical) model including quantum mechanical effects to do parameter extraction for ultrathin oxide device. Here the effective extracting strategy is designed and numerical experiments demonstrate the validity of the strategy.
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Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/2006-JCM-8761
Journal of Computational Mathematics, Vol. 24 (2006), Iss. 3 : pp. 401–411
Published online: 2006-01
AMS Subject Headings:
Copyright: COPYRIGHT: © Global Science Press
Pages: 11
Keywords: Poisson Equation Schrödinger Equation MOS Capacitor Quantum Effect Sensitivity Parameter Extraction.