Global Existence and Asymptotic Behavior of the Solution to 1-D Energy Transport Model for Semiconductors
Year: 2002
Journal of Partial Differential Equations, Vol. 15 (2002), Iss. 4 : pp. 81–95
Abstract
In this paper, we study the asymptotic behavior of global smooth solution to the initial boundary problem for the 1-D energy transport model in semiconductor science. We prove that the smooth solution of the problem converges to a stationary solution exponentially fast as t → ∞ when the initial data is a small perturbation of the stationary solution.
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Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/2002-JPDE-5463
Journal of Partial Differential Equations, Vol. 15 (2002), Iss. 4 : pp. 81–95
Published online: 2002-01
AMS Subject Headings:
Copyright: COPYRIGHT: © Global Science Press
Pages: 15
Keywords: energy transport model