Reconstruction of Mobilities for Electrons and Holes in Semiconductors

Reconstruction of Mobilities for Electrons and Holes in Semiconductors

Year:    1999

Journal of Partial Differential Equations, Vol. 12 (1999), Iss. 4 : pp. 289–300

Abstract

From a simplified approximate semiconductor model, we develop a 1-D identification problem to recover the mobilities for electrons and holes in semiconductors based on the LBIC technique, and cast it as an optimization problem. Its solution is defined by the minimal point of some objective functional. On this argumentation, we derive the gradient operator of objective functional and the necessary condition for the solution of inverse problem. Our result provides a numerical approach to reconstruct the mobilities for electrons and holes in semiconductors.

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Journal Article Details

Publisher Name:    Global Science Press

Language:    English

DOI:    https://doi.org/1999-JPDE-5542

Journal of Partial Differential Equations, Vol. 12 (1999), Iss. 4 : pp. 289–300

Published online:    1999-01

AMS Subject Headings:   

Copyright:    COPYRIGHT: © Global Science Press

Pages:    12

Keywords:    LBIC technique