Transverse Stark Effect of Electrons in GaAs Semiconducting Quantum Boxes
Year: 2011
Author: Sheng Wang, Yun Kang, Yu Han
Journal of Atomic and Molecular Sciences, Vol. 2 (2011), Iss. 2 : pp. 162–169
Abstract
The transverse Stark shift of the electronic energy levels in GaAs semiconducting quantum box is investigated by the use of variational solutions to the effective-mass approximation. It is found an interesting phenomenon that the largest Stark shift is obtained for the electric field directed along the diagonal in cross section of a quantum box, while for a rectangular one, the shift reaches peak value for the low field directed along a side of cross section and for the high field along the diagonal. Likewise, the conclusion is shown that the transverse Stark shift in a quantum box depends highly on the ratio of cross sectional sides while is irrelevant to its height. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination and wide irradiance spectrum.
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Journal Article Details
Publisher Name: Global Science Press
Language: English
DOI: https://doi.org/10.4208/jams.082510.092010a
Journal of Atomic and Molecular Sciences, Vol. 2 (2011), Iss. 2 : pp. 162–169
Published online: 2011-01
AMS Subject Headings: Global Science Press
Copyright: COPYRIGHT: © Global Science Press
Pages: 8
Keywords: Stark effect quantum boxes electric field variational method quantum sizes.
Author Details
Sheng Wang Email
Yun Kang Email
Yu Han Email