Dynamics of the Formation of the Nitrogen-Vacancy Center in Diamond

Dynamics of the Formation of the Nitrogen-Vacancy Center in Diamond

Year:    2016

Communications in Computational Physics, Vol. 19 (2016), Iss. 2 : pp. 380–392

Abstract

We present results of simulations of the energetics and dynamics involved in the realization of the NV (nitrogen-vacancy) center in diamond. We use the self-consistent charge-density functional tight-binding approximation and show that when the nitrogen resides on a single substitutional site, it fails to attract a vacancy, hence no NV center can be formed. However, if it occupies a split interstitial site and two vacancies reside on the second or third neighbor sites, an NV center will form following annealing at temperatures as low as $300℃$ and $650℃$, respectively. These results provide guidelines to experimentalists on how to increase the efficiency of NV formation in diamond.

You do not have full access to this article.

Already a Subscriber? Sign in as an individual or via your institution

Journal Article Details

Publisher Name:    Global Science Press

Language:    English

DOI:    https://doi.org/10.4208/cicp.261014.200515a

Communications in Computational Physics, Vol. 19 (2016), Iss. 2 : pp. 380–392

Published online:    2016-01

AMS Subject Headings:    Global Science Press

Copyright:    COPYRIGHT: © Global Science Press

Pages:    13

Keywords:   

  1. Anomalous Formation of Irradiation-Induced Nitrogen-Vacancy Centers in 5 nm-Sized Detonation Nanodiamonds

    So, Frederick T.-K. | Shames, Alexander I. | Terada, Daiki | Genjo, Takuya | Morishita, Hiroki | Ohki, Izuru | Ohshima, Takeshi | Onoda, Shinobu | Takashima, Hideaki | Takeuchi, Shigeki | Mizuochi, Norikazu | Igarashi, Ryuji | Shirakawa, Masahiro | Segawa, Takuya F.

    The Journal of Physical Chemistry C, Vol. 126 (2022), Iss. 11 P.5206

    https://doi.org/10.1021/acs.jpcc.1c10466 [Citations: 8]
  2. Tailoring spin defects in diamond by lattice charging

    Fávaro de Oliveira, Felipe | Antonov, Denis | Wang, Ya | Neumann, Philipp | Momenzadeh, Seyed Ali | Häußermann, Timo | Pasquarelli, Alberto | Denisenko, Andrej | Wrachtrup, Jörg

    Nature Communications, Vol. 8 (2017), Iss. 1

    https://doi.org/10.1038/ncomms15409 [Citations: 89]
  3. Spatially controlled fabrication of single NV centers in IIa HPHT diamond

    Trofimov, Sergei D. | Tarelkin, Sergey A. | Bolshedvorskii, Stepan V. | Bormashov, Vitaly S. | Troshchiev, Sergey Yu. | Golovanov, Anton V. | Luparev, Nikolai V. | Prikhodko, Dmitrii D. | Boldyrev, Kirill N. | Terentiev, Sergey A. | Akimov, Alexey V. | Kargin, Nikolay I. | Kukin, Nikolay S. | Gusev, Alexander S. | Shemukhin, Andrey A. | Balakshin, Yuri V. | Buga, Sergei G. | Blank, Vladimir D.

    Optical Materials Express, Vol. 10 (2020), Iss. 1 P.198

    https://doi.org/10.1364/OME.10.000198 [Citations: 25]
  4. Optimizing the density of nitrogen implantation for generating high-density NV center ensembles for quantum sensing

    Feng, Fupan | Zhang, Wenlong | Zhang, Jian | Lou, Liren | Zhu, Wei | Wang, Guanzhong

    The European Physical Journal D, Vol. 73 (2019), Iss. 9

    https://doi.org/10.1140/epjd/e2019-100047-8 [Citations: 5]
  5. Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing

    Fu, Xiu | Xu, Zongwei | He, Zhongdu | Hartmaier, Alexander | Fang, Fengzhou

    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 450 (2019), Iss. P.51

    https://doi.org/10.1016/j.nimb.2018.04.027 [Citations: 19]
  6. Nitrogen-vacancy defects near the С(100)-(2 × 1) diamond surface

    Ponomarev, O.V. | Ryazanova, A.I. | Lvova, N.A.

    Surface Science, Vol. 667 (2018), Iss. P.92

    https://doi.org/10.1016/j.susc.2017.10.003 [Citations: 4]
  7. On the efficiency of combined ion implantation for the creation of near‐surface nitrogen‐vacancy centers in diamond

    Fávaro de Oliveira, Felipe | Momenzadeh, Seyed Ali | Antonov, Denis | Fedder, Helmut | Denisenko, Andrej | Wrachtrup, Jörg

    physica status solidi (a), Vol. 213 (2016), Iss. 8 P.2044

    https://doi.org/10.1002/pssa.201600326 [Citations: 12]